| PART |
Description |
Maker |
| HY64UD16322M-DF85E HY64UD16322M-DF85I HY64UD16322M |
Mobile PSRAM - 32Mb
2M x 16 bit Low Low Power 1T/1C Pseudo SRAM
x16|3.0(VDD)3.0(VDDQ)V|70/85|Pseudo SRAM - 32M x16 | 3.0（VDD）在3.0（提供VDDQ）V | 70/85 |伪静态存储器- 32M
|
Hynix Semiconductor, Inc.
|
| HY5PS121621BFP |
VDD ,VDDQ =1.8 +/- 0.1V
|
Hynix Semiconductor
|
| MAX1253 MAX1254 MAX1253BEUE MAX1253AEUE MAX1254AEU |
Stand-Alone, 10-Channel, 12-Bit System Monitors with Internal Temperature Sensor and VDD Monitor 9-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO16
Stand-Alone / 10-Channel / 12-Bit System Monitors with Internal Temperature Sensor and VDD Monitor
|
http://
Maxim Integrated Products, Inc.
|
| EM47EM3288SBA EM47EM3288SBA-125 EM47EM3288SBA-150 |
JEDEC Standard VDD/VDDQ
|
Eorex Corporation
|
| EM47DM0888SBA EM47DM0888SBA-125 EM47DM0888SBA-125E |
JEDEC Standard VDD/VDDQ
|
Eorex Corporation
|
| EM44CM1688LBB-3F EM44CM1688LBB-25F |
JEDEC Standard VDD/VDDQ
|
Eorex Corporation
|
| MT58L256L3 MT58L256L32D |
8Mb Syncburst SRAM, 3.3V Vdd, 3.3V I/O, Pipelined, Dcd,
|
MICRON
|
| MT8812 |
8 x 12 Analog Switch Array with low on-resistance, for VDD = 4.5V to 14.5V
|
Zarlink Semiconductor
|
| 2SK3325 |
Low gate charge: QG = 22 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 10 A)
|
TY Semiconductor Co., Ltd
|
| MT49H8M36 |
288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II
|
Micron Technology
|
| MT88V32 |
8 x 4 High Performance Video Switch Array (200 MHz Bandwidth), for (VDD - VEE) = 4.5 V to 13.2 V
|
Zarlink Semiconductor
|
| DRF1203 |
RF Hybrid with driver MOSFET; P(out) (W): 650; fO (MHz): 30; VDD (V): 15; BVDSS (V): 1000; RqJC (ºC/Watt): 0.14; Case Style: T2B; COO: D-E 8 A BUF OR INV BASED MOSFET DRIVER, DMA10
|
Microsemi, Corp.
|
